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FP35R12W2T4, IGBT Modules IGBT-MODULE

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesThe Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.

Channel Type	N
Configuration	3 Phase Bridge
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	54 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	215 W
Minimum Operating Temperature	-40 °C
Mounting Type	Panel Mount
Package Type	AG-EASY2B-1
Transistor Configuration	3 Phase
Collector Current (DC)	54(A)
Collector-Emitter Voltage	1200(V)
Gate to Emitter Voltage (Max)	±20(V)
Mounting	Screw
Operating Temperature (Max)	150C
Operating Temperature (Min)	-40C
Operating Temperature Classification	Automotive
Packaging	Tray
Pin Count	23
Rad Hardened	No
Вес, г	39