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FP35R12W2T4PB11BPSA1, IGBT Modules 1200 V, 35 A PIM IGBT module

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesThe Infineon EasyPIM three phase input rectifier power integrated modules IGBT module with TRENCHSTOP IGBT7 technology.

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.85 V
Configuration	3-Phase Inverter
Continuous Collector Current at 25 C	35 A
Factory Pack Quantity	18
Gate-Emitter Leakage Current	100 nA
Manufacturer	Infineon
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-40 C
Packaging	Tray
Part # Aliases	FP35R12W2T4P_B11 SP001326042
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Subcategory	IGBTs
Channel Type	N
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	35 A
Maximum Gate Emitter Voltage	20V
Maximum Power Dissipation	20 mW
Number of Transistors	7
Package Type	EASY2B
Вес, г	39