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FP75R12N3T7B81BPSA1, IGBT Modules LOW POWER ECONO

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules1200V PIM IGBT Modules Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.55 V
Configuration	3-Phase Inverter
Continuous Collector Current at 25 C	75 A
Factory Pack Quantity	10
Gate-Emitter Leakage Current	100 nA
Manufacturer	Infineon
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Packaging	Tray
Part # Aliases	FP75R12N3T7_B81 SP005632512
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Subcategory	IGBTs
Technology	Si