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Цена по запросу
FQP50N06L, Транзистор
Описание Транзистор: N-MOSFET; полевой; 60В; 37,1А; Idm: 210А; 121Вт; TO220-3 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 145 ns |
| Forward Transconductance - Min | 40 S |
| Height | 16.3 mm |
| Id - Continuous Drain Current | 52 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 121 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 21 mOhms |
| Rise Time | 380 ns |
| RoHS | Details |
| Series | FQP50N06L |
| Technology | Si |
| Tradename | QFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 80 ns |
| Typical Turn-On Delay Time | 20 ns |
| Unit Weight | 0.063493 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.7 mm |
| Вес, г | 2.785 |
