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Цена по запросу
FS150R12PT4BOSA1 IGBT Module, 200 A 1200 V Module, Panel Mount
Semiconductors\Discrete Semiconductors\IGBTsThe Infineon IGBT module has VCEsat with positive temperature coefficient. This GBT module has 1200V collector emitter voltage and 150A continuous DC collector current.
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 200 A |
| Maximum Gate Emitter Voltage | +/-20V |
| Maximum Power Dissipation | 680 W |
| Mounting Type | Panel Mount |
| Package Type | Module |
| Base Product Number | FS150R12 -> |
| Configuration | Three Phase Inverter |
| Current - Collector (Ic) (Max) | 200A |
| Current - Collector Cutoff (Max) | 1mA |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 9.35nF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| NTC Thermistor | Yes |
| Operating Temperature | -40В°C ~ 150В°C |
| Package | Bulk |
| Package / Case | Module |
| Power - Max | 680W |
| REACH Status | REACH Unaffected |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 150A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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