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Цена по запросу
FS200R12N3T7BPSA1 IGBT, 200 A 1200 V
Semiconductors\Discrete Semiconductors\IGBTsThe Infineon FS200 is a EconoPACK 3 module with IGBT and emitter controlled diode and NTC. Low VCEsat
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 200 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 20 mW |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Configuration | 6-Pack |
| Continuous Collector Current at 25 C | 200 A |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Packaging | Tray |
| Part # Aliases | FS200R12N3T7 SP005337556 |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Series | FSXR12N3X7G |
| Subcategory | IGBTs |
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