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FS50R12W2T7BPSA1, IGBT Modules 1200 V, 50 A sixpack IGBT module

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules1200V Sixpack IGBT Modules Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1200 V
Collector-Emitter Saturation Voltage	1.5 V
Continuous Collector Current at 25 C	50 A
Factory Pack Quantity: Factory Pack Quantity	15
Gate-Emitter Leakage Current	100 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Packaging	Tray
Part # Aliases	FS50R12W2T7 SP005426181
Pd - Power Dissipation	20 mW
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Silicon Modules
Series	Trenchstop IGBT7
Subcategory	IGBTs
Technology	Si
Tradename	TRENCHSTOP ~ EasyPACK