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FS820R08A6P2BBPSA1, IGBT модуль N-канальный 750В 450А 714Вт автомобильного применения 33-Pin AG-HYBRIDD-1 лоток
Транзисторы / IGBT (БТИЗ) транзисторы / Силовые модули IGBTIGBT модуль N-канальный 750В 450А 714Вт автомобильного применения 33-Pin AG-HYBRIDD-1 лоток
| Channel Type | N |
| Maximum Collector Emitter Voltage | 750 V |
| Maximum Continuous Collector Current | 820 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 20 mW |
| Number of Transistors | 6 |
| Package Type | HYBRID |
| Pin Count | 20 |
| Transistor Configuration | Six Pack |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 750 V |
| Collector-Emitter Saturation Voltage | 1.1 V |
| Configuration | 6-Pack |
| Continuous Collector Current at 25 C | 450 A |
| Factory Pack Quantity: Factory Pack Quantity | 6 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Package / Case | Module |
| Packaging | Tray |
| Part # Aliases | FS820R08A6P2B SP001499708 |
| Pd - Power Dissipation | 714 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Series | IGBT EDT2 |
| Subcategory | IGBTs |
| Technology | Si |
| Tradename | HybridPACK PressFIT |
| Вес, г | 735 |
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