Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
FZ600R12KE3, IGBT Modules 1200V 600A SINGLE
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 900 A |
| Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Package / Case | 62 mm |
| Packaging | Tray |
| Part # Aliases | SP000100724 FZ600R12KE3HOSA1 |
| Pd - Power Dissipation | 2.8 kW |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 341 |
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