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GAP3SLT33-214
ЭлектроэлементRectifier Diode, Schottky, 1 Phase, 1 Element, 0.3A, 3300V V(RRM), Silicon Carbide, DO-214
| Brand | GeneSiC Semiconductor |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| If - Forward Current | 0.3 A |
| Ifsm - Forward Surge Current | 10 A |
| Ir - Reverse Current | 100 uA |
| Manufacturer | GeneSiC Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 C to+175 C |
| Package / Case | DO-214AA |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 25 W |
| Product | Schottky Silicon Carbide Diodes |
| Product Category | Schottky Diodes Rectifiers |
| RoHS | Details |
| Series | GAP3SLT33 |
| Technology | SiC |
| trr - Reverse Recovery time | 60 ns |
| Unit Weight | 0.003284 oz |
| Vf - Forward Voltage | 4 V |
| Vrrm - Repetitive Reverse Voltage | 3300 V |
| Factory Pack Quantity | 3000 |
| If - Forward Current | 300 mA |
| Package/Case | DO-214-2 |
| Product Category | Schottky Diodes & Rectifiers |
| Product Type | Schottky Diodes & Rectifiers |
| Subcategory | Diodes & Rectifiers |
| Type | Schottky Silicon Carbide Diodes |
| Vf - Forward Voltage | 1.2 V |
| Vrrm - Repetitive Reverse Voltage | 3.3 kV |
| Вес, г | 0.0931 |
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