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HN1A01FU-Y,LF

Semiconductors\Discrete SemiconductorsBipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Brand	Toshiba
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Saturation Voltage	100 mV
Configuration	Dual
Continuous Collector Current	-150 mA
DC Collector/Base Gain hFE Min	120
DC Current Gain hFE Max	400
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	3000
Gain Bandwidth Product fT	80 MHz
Manufacturer	Toshiba
Maximum DC Collector Current	150 mA
Maximum Operating Temperature	+125 C
Mounting Style	SMD/SMT
Package/Case	US-6
Pd - Power Dissipation	200 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Qualification	AEC-Q101
Subcategory	Transistors
Technology	Si
Transistor Polarity	PNP