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IDH08G65C6XKSA1

ЭлектроэлементSIC SCHOTTKY DIODE, 650V, 20A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:12.2nC; Dio

Brand	Infineon Technologies
Configuration	Single
Factory Pack Quantity	500
If - Forward Current	20 A
Ifsm - Forward Surge Current	47 A
Ir - Reverse Current	0.8 uA
Manufacturer	Infineon
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-220-2
Packaging	Tube
Part # Aliases	IDH08G65C6
Pd - Power Dissipation	63 W
Product	Schottky Silicon Carbide Diodes
Product Category	Schottky Diodes Rectifiers
RoHS	Details
Technology	SiC
Unit Weight	0.070548 oz
Vf - Forward Voltage	1.25 V
Vrrm - Repetitive Reverse Voltage	650 V
Average Rectified Current (Io)	20A
Diode Configuration	Single
Forward Voltage (Vf@If)	1.25V@8A
Reverse Leakage Current (Ir)	800nA@420V
Reverse Voltage (Vr)	650V
Diode Technology	SiC Schottky
Diode Type	SiC Schottky
Maximum Continuous Forward Current	8A
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	PG-TO220
Peak Reverse Repetitive Voltage	650V
Pin Count	2
Rectifier Type	Schottky Diode
Вес, г	1