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Цена по запросу
IDP30E120XKSA1, Диод импульсный, 1,2кВ, 30А, TO220-2
Полупроводники\Диоды\Универсальные диоды\Универсальные диоды THTСтандартный диод 1200V 50A (DC) Through Hole PG-TO220-2-2
| Case | TO220-2 |
| Features of semiconductor devices | fast switching |
| Kind of package | tube |
| Load current | 30A |
| Manufacturer | INFINEON TECHNOLOGIES |
| Max. off-state voltage | 1.2kV |
| Mounting | THT |
| Semiconductor structure | single diode |
| Type of diode | rectifying |
| Base Product Number | IDP30E120 -> |
| Current - Average Rectified (Io) | 50A (DC) |
| Current - Reverse Leakage @ Vr | 100ВµA @ 1200V |
| Diode Type | Standard |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55В°C ~ 150В°C |
| Package | Tube |
| Package / Case | TO-220-2 |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 243ns |
| RoHS Status | ROHS3 Compliant |
| Speed | Fast Recovery = 200mA (Io) |
| Supplier Device Package | PG-TO220-2-2 |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Voltage - Forward (Vf) (Max) @ If | 2.15V @ 30A |
| Diode Configuration | Single |
| Diode Technology | Silicon Junction |
| Maximum Forward Voltage Drop | 2.15V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 2 |
| Power Dissipation | 138W |
| Width | 4.5mm |
| Automotive | No |
| Maximum Continuous Forward Current - (A) | 50 |
| Maximum Power Dissipation - (mW) | 138000 |
| Military | No |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tube |
| Peak Forward Voltage - (V) | 2.15@30A |
| Peak Non-Repetitive Surge Current - (A) | 102 |
| Peak Reverse Current - (uA) | 100 |
| Peak Reverse Recovery Time - (ns) | 243(Typ) |
| Peak Reverse Repetitive Voltage - (V) | 1200 |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220 |
| Вес, г | 1.97 |
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