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По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IHW20N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin PG-TO247-3, Through Hole
Semiconductors\Discrete Semiconductors\IGBTsThe Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications.
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 40 A |
| Maximum Gate Emitter Voltage | +/-20V |
| Maximum Power Dissipation | 150 W |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | PG-TO247-3 |
| Pin Count | 3 |
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