Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
Semiconductors\Discrete Semiconductors\IGBTsA range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology.
Channel Type | N |
Gate Capacitance | 2066pF |
Maximum Collector Emitter Voltage | 1350 V |
Maximum Continuous Collector Current | 30 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 349 W |
Minimum Operating Temperature | -40 °C |
Mounting Type | Through Hole |
Package Type | TO-247 |
Pin Count | 3 |
Transistor Configuration | Single |
Вес, г | 24 |