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IKFW50N60DH3EXKSA1 IGBT PG-TO247-3-AI
Semiconductors\Discrete Semiconductors\IGBTsThe Infineon high speed switching 600 V, 40 A third generation TRENCHSTOP IGBT co-packed with rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
| Maximum Power Dissipation | 130 W |
| Package Type | PG-TO247-3-AI |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 40 A |
| Continuous Collector Current Ic Max | 60 A |
| Factory Pack Quantity: Factory Pack Quantity | 240 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | -20 V, 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | TO247-3 |
| Packaging | Tube |
| Part # Aliases | IKFW50N60DH3E SP001502656 |
| Pd - Power Dissipation | 130 W |
| Product Category | IGBT Transistors |
| Product Type | IGBT Transistors |
| Series | Trenchstop High Speed 3 |
| Subcategory | IGBTs |
| Technology | Si |
| Tradename | TRENCHSTOP |
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