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IPB60R120P7ATMA1, Биполярный транзистор N-канал 600В 26А D2PAK TO-263-3
транзисторы биполярные импортныеThis Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process.
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 1000 |
| Fall Time | 6 ns |
| Id - Continuous Drain Current | 26 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Part # Aliases | IPB60R120P7 SP001664922 |
| Pd - Power Dissipation | 95 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 36 nC |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Rise Time | 14 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 81 ns |
| Typical Turn-On Delay Time | 21 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Resistance | 0.12 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Threshold Voltage | 4V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | CoolMOS™ P7 |
| Вес, г | 5 |
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