Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IPD60R380P6ATMA1, Транзистор
MOSFET, N-CH, 600V, 10.6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;
| Current - Continuous Drain (Id) @ 25В°C | 10.6A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 877pF @ 100V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 83W(Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| Series | CoolMOSв(ў P6 |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 320ВµA |
| Вес, г | 4 |
