Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IPP032N06N3GXKSA1, Транзистор полевой MOSFET N-канальный 60В 120A 188Вт 3-Pin(3+Tab) TO-220 туба, CoolMOS
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 10.36mm
Transistor Configuration Single
Brand Infineon
Maximum Continuous Drain Current 120 A
Package Type TO-220
Maximum Power Dissipation 188 W
Series OptiMOS 3
Mounting Type Through Hole
Minimum Operating Temperature -55 °C
Width 4.57mm
Maximum Gate Threshold Voltage 4V
Height 15.95mm
Minimum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 3.2 mΩ
Maximum Drain Source Voltage 60 V
Pin Count 3
Typical Gate Charge @ Vgs 124 nC @ 10 V
Transistor Material Si
Channel Mode Enhancement
Channel Type N
Maximum Gate Source Voltage -20 V, +20 V
Forward Diode Voltage 1.2V
Вес, г 2.5
Infineon Technologies
| Напряжение исток-сток макс. | 60В |
| Ток стока макс. | 120А |
| Мощность макс. | 188Вт |
| Тип транзистора | N-канальный |
| Тип монтажа | Through Hole |
| Корпус | TO-220 |
| Вес брутто | 2.97 г. |
| Наименование | IPP032N06N3GXKSA1 |
| Производитель | Infineon Technologies |
| Описание Eng | MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube |
| Тип упаковки | Tube (туба) |
| Нормоупаковка | 50 шт |
