Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IPP075N15N3 G, Транзистор
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 500 |
| Fall Time | 14 ns |
| Forward Transconductance - Min | 65 S |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | SP000680832 IPP75N15N3GXK IPP075N15N3GXKSA1 |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 93 nC |
| Rds On - Drain-Source Resistance | 6.2 mOhms |
| Rise Time | 35 ns |
| Series | OptiMOS 3 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 46 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Вес, г | 6 |
