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IPP180N10N3GXKSA1, Транзистор MOSFET N-CH 100В 43A TO220-3

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	43 A
Maximum Drain Source Resistance	33 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	71 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	OptiMOS 3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	19 nC @ 10 V
Width	4.57mm
Вес, г	6