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IPP330P10NMAKSA1, MOSFET TRENCH  =100V
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IPP330P10NMAKSA1, MOSFET TRENCH =100V

P-Channel Power MOSFETs Infineon P-Channel Power MOSFETs offer an option that can simplify circuitry while optimizing performance. The large portfolio of P-Channel power MOSFETs is designed for a wide range of industrial and automotive applications. The main advantage of a P-Channel device is the reduction of design complexity in high- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low voltage drive applications.
Brand Infineon Technologies
Channel Mode Enhancement
Factory Pack Quantity: Factory Pack Quantity 500
Id - Continuous Drain Current 62 A
Manufacturer Infineon
Maximum Operating Temperature +175 C
Minimum Operating Temperature -55 C
Mounting Style Through Hole
Number of Channels 1 Channel
Packaging Tube
Part # Aliases IPP330P10NM SP005343871
Pd - Power Dissipation 300 W
Product Category MOSFET
Product Type MOSFET
Product MOSFET
Qg - Gate Charge 189 nC
Rds On - Drain-Source Resistance 33 mOhms
Series IPP330P10
Subcategory MOSFETs
Technology Si
Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Vgs - Gate-Source Voltage -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Вес, г 1

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