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IPT012N06NATMA1, MOSFETs TRENCH 40 - 100V
UnclassifiedUSB-C Chargers & Adapters
Infineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2000 |
| Fall Time | 23 ns |
| Forward Transconductance - Min | 240 S |
| Id - Continuous Drain Current | 313 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PG-HSOF-8 |
| Packaging | Reel, Cut Tape |
| Part # Aliases | IPT012N06N SP001637074 |
| Pd - Power Dissipation | 214 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 106 nC |
| Rds On - Drain-Source Resistance | 1.2 mOhms |
| Rise Time | 27 ns |
| Subcategory | MOSFETs |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 48 ns |
| Typical Turn-On Delay Time | 16 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 313 A |
| Maximum Drain Source Voltage | 60 V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PG-HSOF-8 |
| Pin Count | 8 |
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