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IR2128STRPBF, Gate Drivers 1 HI SIDE DRVR INVERTING INPUT
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IR2128STRPBF, Gate Drivers 1 HI SIDE DRVR INVERTING INPUT

Power\Power Management ICs\Gate DriversEiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Brand Infineon Technologies
Factory Pack Quantity 2500
Fall Time 40 ns
Logic Type CMOS, TTL
Manufacturer Infineon
Maximum Operating Temperature +125 C
Maximum Turn-Off Delay Time 200 ns
Maximum Turn-On Delay Time 250 ns
Minimum Operating Temperature -40 C
Moisture Sensitive Yes
Mounting Style SMD/SMT
Number of Drivers 1 Driver
Number of Outputs 1 Output
Operating Supply Current 120 uA
Output Current 200 mA
Package/Case SOIC-8
Pd - Power Dissipation 625 mW
Product Category Gate Drivers
Product Type Gate Drivers
Product IGBT, MOSFET Gate Drivers
Rise Time 80 ns
Subcategory PMIC-Power Management ICs
Supply Voltage - Max 20 V
Supply Voltage - Min 10 V
Technology Si
Type High-Side, Low-Side
Channel Type Single
Current - Peak Output (Source, Sink) 250mA, 500mA
DigiKey Programmable Not Verified
Driven Configuration High-Side or Low-Side
Gate Type IGBT, N-Channel MOSFET
High Side Voltage - Max (Bootstrap) 600 V
Input Type Inverting
Logic Voltage - VIL, VIH 0.8V, 3V
Mounting Type Surface Mount
Number of Drivers 1
Operating Temperature -40°C ~ 150°C(TJ)
Package / Case 8-SOIC(0.154", 3.90mm Width)
Rise / Fall Time (Typ) 80ns, 40ns
Supplier Device Package 8-SOIC
Voltage - Supply 12V ~ 20V
Вес, г 0.18

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