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IRF540STRLPBF

Semiconductors\Discrete SemiconductorsTrans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	28
Maximum Diode Forward Voltage (V)	2.5
Maximum Drain Source Resistance (mOhm)	77 10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	25
Maximum Operating Temperature (°C)	175
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	3700
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.7
Maximum Pulsed Drain Current @ TC=25°C (A)	110
Minimum Gate Threshold Voltage (V)	2
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 175
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO-263
Supplier Package	D2PAK
Tab	Tab
Typical Fall Time (ns)	43
Typical Gate Charge @ 10V (nC)	72(Max)
Typical Gate Charge @ Vgs (nC)	72(Max)10V
Typical Gate Plateau Voltage (V)	5.8
Typical Gate to Drain Charge (nC)	32(Max)
Typical Gate to Source Charge (nC)	11(Max)
Typical Input Capacitance @ Vds (pF)	1700 25V
Typical Output Capacitance (pF)	560
Typical Reverse Recovery Charge (nC)	1300
Typical Reverse Recovery Time (ns)	180
Typical Reverse Transfer Capacitance @ Vds (pF)	120 25V
Typical Rise Time (ns)	44
Typical Turn-Off Delay Time (ns)	53
Typical Turn-On Delay Time (ns)	11