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IRF820APBF, MOSFET 500V N-CH HEXFET

Semiconductors\Discrete Semiconductors Описание Транзистор: N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Base Product Number	IRF820 ->
Current - Continuous Drain (Id) @ 25В°C	2.5A (Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Other Related Documents	http://www.vishay.com/docs/88869/packaging.pdf
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 250ВµA
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	2.5
Maximum Drain Source Resistance (mOhm)	3000 10V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	50000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO-220
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	13
Typical Gate Charge @ 10V (nC)	17(Max)
Typical Gate Charge @ Vgs (nC)	17(Max)10V
Typical Input Capacitance @ Vds (pF)	340 25V
Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	16
Typical Turn-On Delay Time (ns)	8.1
Maximum Continuous Drain Current	2.5 A
Maximum Drain Source Resistance	3 Ω
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	50 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Package Type	TO-220AB
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	17 nC @ 10 V
Width	4.7mm
Brand	Vishay Semiconductors
Factory Pack Quantity	50
Manufacturer	Vishay
Packaging	Tube
RoHS	Details
Series	IRF/SIHF820
Unit Weight	0.211644 oz