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Цена по запросу
IRF8721TRPBF, Транзистор полевой MOSFET N-канальный 30В 14А 2.5Вт
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Maximum Operating Temperature +150 °C
Maximum Continuous Drain Current 14 A
Package Type SOIC
Maximum Power Dissipation 2.5 W
Mounting Type Surface Mount
Width 4mm
Forward Transconductance 27s
Height 1.5mm
Dimensions 5 x 4 x 1.5mm
Transistor Material Si
Number of Elements per Chip 1
Length 5mm
Transistor Configuration Single
Typical Turn-On Delay Time 8.2 ns
Brand Infineon
Typical Turn-Off Delay Time 8.1 ns
Series HEXFET
Minimum Operating Temperature -55 °C
Maximum Gate Threshold Voltage 2.35V
Minimum Gate Threshold Voltage 1.35V
Maximum Drain Source Resistance 12.5 mΩ
Maximum Drain Source Voltage 30 V
Pin Count 8
Category Power MOSFET
Typical Gate Charge @ Vgs 8.3 nC @ 4.5 V
Channel Mode Enhancement
Typical Input Capacitance @ Vds 1040 pF @ 15 V
Channel Type N
Maximum Gate Source Voltage -20 V, +20 V
Forward Diode Voltage 1V
Вес, г 0.15
Infineon Technologies
| Напряжение исток-сток макс. | 30В |
| Ток стока макс. | 14А |
| Мощность макс. | 2.5Вт |
| Тип транзистора | N-канальный |
| Тип монтажа | Surface Mount |
| Вес брутто | 0.02 г. |
| Наименование | IRF8721TRPBF |
| Производитель | Infineon Technologies |
| Описание Eng | MOSFET N-CH 30V 14A 8-SOIC |
| Тип упаковки | Tape and Reel (лента в катушке) |
| Нормоупаковка | 4000 шт |
| Корпус | SO-8 |
