Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Главная
Электронные компоненты
Микросхемы
Прочие микросхемы импортные

IRF9321TRPBF, транзистор Pкан -30В -15А SO8

Цена по запросу

Заказать в 1 клик

IRF9321TRPBF, транзистор Pкан -30В -15А SO8

микросхемы импортные разныеInfineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge.

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	15
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	7.2@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.4
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	2500
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	120
Minimum Gate Threshold Voltage (V)	1.3
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	HEXFET
Product Category	Power MOSFET
Standard Package Name	SO
Supplier Package	SOIC
Typical Fall Time (ns)	145
Typical Gate Charge @ 10V (nC)	65
Typical Gate Charge @ Vgs (nC)	34@4.5V\|65@10V
Typical Gate Plateau Voltage (V)	3
Typical Gate Threshold Voltage (V)	1.8
Typical Gate to Drain Charge (nC)	16
Typical Gate to Source Charge (nC)	10
Typical Input Capacitance @ Vds (pF)	2590@25V
Typical Output Capacitance (pF)	590
Typical Reverse Recovery Charge (nC)	24
Typical Reverse Recovery Time (ns)	38
Typical Reverse Transfer Capacitance @ Vds (pF)	360@25V
Typical Rise Time (ns)	79
Typical Turn-Off Delay Time (ns)	185
Typical Turn-On Delay Time (ns)	21
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	15 A
Maximum Drain Source Resistance	11.2 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1.3V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOIC
Series	HEXFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	65 nC @ 10 V
Width	4mm
Brand	Infineon Technologies
Factory Pack Quantity: Factory Pack Quantity	4000
Id - Continuous Drain Current	15 A
Manufacturer	Infineon
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOIC-8
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	34 nC
Rds On - Drain-Source Resistance	11.2 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.8 V
Вес брутто	0.25
Диапазон рабочих температур	-55…+150 °С
Емкость, пФ	2590
Заряд затвора, нКл	98
Максимально допустимое напряжение	затвор-исток(Vgs)±20 В
Максимальное напряжение сток-исток, В	-30
Максимальный ток стока (при Ta=25C), А	-15
Минимальное сопротивление открытого канала, мОм	11.2
Мощность	рассеиваемая(Pd)-2.5 Вт
Напряжение	пороговое затвора(Vgs th)-1.8В
Описание	MOSFET MOSFT P-Ch-30V-15A 7.2mOhm
Способ монтажа	поверхностный(SMT)
Тип	MOSFET
Тип проводимости	P
Транспортная упаковка: размер/кол-во	584650/4000
Упаковка	REEL, 4000 шт.