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Только с Юр. Лицами,
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Цена по запросу
IRFR120TRPBF, MOSFET 100V N-CH HEXFET D-PAK
Semiconductors\Discrete SemiconductorsМОП-транзистор N-Chan 100V 7.7 Amp
| Категория продукта | МОП-транзистор |
| Подкатегория | MOSFETs |
| Размер фабричной упаковки | 2000 |
| Серия | IRFR |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 7.7 |
| Maximum Drain Source Resistance (mOhm) | 270 10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 17 |
| Typical Gate Charge @ 10V (nC) | 16(Max) |
| Typical Gate Charge @ Vgs (nC) | 16(Max)10V |
| Typical Input Capacitance @ Vds (pF) | 360 25V |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 6.8 |
| Continuous Drain Current (Id) | 7.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 270mΩ@4.6A, 10V |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 360pF@25V |
| Power Dissipation (Pd) | 2.5W;42W |
| Total Gate Charge (Qg@Vgs) | 16nC@10V |
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