Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
![IRFR5410TRPBF, Трназистор P-MOSFET 100В 13А [DPAK]](/images/placeholder.jpg)
Цена по запросу
IRFR5410TRPBF, Трназистор P-MOSFET 100В 13А [DPAK]
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge.
| Continuous Drain Current (Id) @ 25В°C | 13A |
| Power Dissipation-Max (Ta=25В°C) | 66W |
| Rds On - Drain-Source Resistance | 205mО© @ 7.8A,10V |
| Transistor Polarity | P Channel |
| Vds - Drain-Source Breakdown Voltage | 100V |
| Vgs - Gate-Source Voltage | 4V @ 250uA |
| Вес, г | 0.4 |
