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IRFR9120TRPBF, MOSFET 100V P-CH HEXFET MOSFET D
Semiconductors\Discrete SemiconductorsTrans MOSFET P-CH 100V 5.6A 3-Pin(2+Tab) DPAK T/R
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 5.6 A |
| Maximum Drain Source Resistance | 600 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 42 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Width | 6.22mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Maximum Continuous Drain Current (A) | 5.6 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Maximum Drain Source Resistance (mOhm) | 600@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 22 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 25 |
| Typical Gate Charge @ 10V (nC) | 18(Max) |
| Typical Gate Charge @ Vgs (nC) | 18(Max)@10V |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Gate to Drain Charge (nC) | 9(Max) |
| Typical Gate to Source Charge (nC) | 3(Max) |
| Typical Input Capacitance @ Vds (pF) | 390@25V |
| Typical Output Capacitance (pF) | 170 |
| Typical Reverse Recovery Charge (nC) | 330 |
| Typical Reverse Recovery Time (ns) | 100 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 45@25V |
| Typical Rise Time (ns) | 29 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 9.6 |
| Continuous Drain Current (Id) | 5.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 600mΩ@10V, 3.4A |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 390pF@25V |
| Power Dissipation (Pd) | 2.5W;42W |
| Total Gate Charge (Qg@Vgs) | 18nC@10V |
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