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IRFRC20TRLPBF, MOSFET N-Chan 600V 2.0 Amp

Semiconductors\Discrete SemiconductorsМОП-транзистор N-Chan 600V 2.0 Amp

Вид монтажа	SMD/SMT
Высота	2.38 mm
Длина	6.73 mm
Категория продукта	МОП-транзистор
Подкатегория	MOSFETs
Размер фабричной упаковки	3000
Серия	IRFR/U
Технология	Si
Тип продукта	MOSFET
Торговая марка	Vishay / Siliconix
Упаковка / блок	TO-252-3
Ширина	6.22 mm
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	2
Maximum Drain Source Resistance (mOhm)	4400 10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	100
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2500
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Tab	Tab
Typical Fall Time (ns)	25
Typical Gate Charge @ 10V (nC)	18(Max)
Typical Gate Charge @ Vgs (nC)	18(Max)10V
Typical Input Capacitance @ Vds (pF)	350 25V
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	30
Typical Turn-On Delay Time (ns)	10
Continuous Drain Current (Id)	2A
Drain Source On Resistance (RDS(on)@Vgs,Id)	4.4Ω@10V, 1.2A
Drain Source Voltage (Vdss)	600V
Gate Threshold Voltage (Vgs(th)@Id)	4V@250uA
Power Dissipation (Pd)	2.5W