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IRFS9N60APBF, MOSFET 600V N-CH HEXFET D2PAK

Semiconductors\Discrete SemiconductorsN CHANNEL MOSFET, 600V, 9.2A D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:9.2A, Drain Source Voltage Vds:600V, On Resistance Rds(on):750mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, No. of Pins:3, RoHS Compliant: Yes

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	9.2 A
Maximum Drain Source Resistance	750 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	170 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	49 nC @ 10 V
Width	9.65mm
Transistor Polarity	N Channel; Continuous Drain Current Id
Case	D2PAK, TO263
Drain current	5.8A
Drain-source voltage	600V
Gate charge	49nC
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	VISHAY
Mounting	SMD
On-state resistance	0.75Ω
Polarisation	unipolar
Power dissipation	170W
Type of transistor	N-MOSFET