Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IRLIZ44GPBF, MOSFET N-Chan 60V 30 Amp
Semiconductors\Discrete Semiconductors
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Resistance | 39 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 48 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 66 nC @ 5 V |
| Case | TO220FP |
| Drain current | 30A |
| Drain-source voltage | 60V |
| Gate charge | 66nC |
| Gate-source voltage | ±10V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | VISHAY |
| Mounting | THT |
| On-state resistance | 39mΩ |
| Polarisation | unipolar |
| Power dissipation | 48W |
| Pulsed drain current | 120A |
| Type of transistor | N-MOSFET |
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