Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IRLR6225TRPBF, Транзистор полевой 20В 100A 4.0мОм 2.5В
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Maximum Operating Temperature +150 °C
Maximum Continuous Drain Current 100 A
Package Type DPAK (TO-252)
Maximum Power Dissipation 63 W
Mounting Type Surface Mount
Width 7.49mm
Forward Transconductance 205s
Height 2.39mm
Dimensions 6.73 x 7.49 x 2.39mm
Transistor Material Si
Number of Elements per Chip 1
Length 6.73mm
Transistor Configuration Single
Typical Turn-On Delay Time 9.7 ns
Brand Infineon
Typical Turn-Off Delay Time 63 ns
Series HEXFET
Minimum Operating Temperature -55 °C
Maximum Gate Threshold Voltage 1.1V
Minimum Gate Threshold Voltage 0.5V
Maximum Drain Source Resistance 5.2 mΩ
Maximum Drain Source Voltage 20 V
Pin Count 3
Category Power MOSFET
Typical Gate Charge @ Vgs 48 nC @ 4.5 V
Channel Mode Enhancement
Typical Input Capacitance @ Vds 3770 pF @ 10 V
Channel Type N
Maximum Gate Source Voltage -12 V, +12 V
Forward Diode Voltage 1.2V
Вес, г 0.4
Infineon Technologies
| Напряжение исток-сток макс. | 20В |
| Ток стока макс. | 100А |
| Сопротивление открытого канала | 4мОм |
| Корпус | DPAK/TO-252AA |
| Вес брутто | 0.4 г. |
| Наименование | IRLR6225TRPBF |
| Производитель | Infineon Technologies |
| Описание Eng | MOSFET, 20V, 100A, 4.0 MOHM, 2.5V DRIVE CAPABLE |
| Тип упаковки | Tape and Reel (лента в катушке) |
| Нормоупаковка | 2000 шт |
