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IRS2184STRPBF, Gate Drivers Hlf Brdg Drvr Soft Trn On Sngl 400ns
Power\Power Management ICs\Gate DriversEiceDRIVER™ Gate Driver ICs
Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That"s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Brand | Infineon Technologies |
Factory Pack Quantity: Factory Pack Quantity | 2500 |
Fall Time | 35 ns |
Features | Synchronous |
Logic Type | CMOS, TTL |
Manufacturer | Infineon |
Maximum Operating Temperature | +125 C |
Maximum Turn-Off Delay Time | 270 ns |
Maximum Turn-On Delay Time | 680 ns |
Minimum Operating Temperature | -40 C |
Moisture Sensitive | Yes |
Mounting Style | SMD/SMT |
Number of Drivers | 2 Driver |
Number of Outputs | 2 Output |
Operating Supply Current | 1.6 mA |
Output Current | 1.9 A |
Package / Case | SOIC-8 |
Pd - Power Dissipation | 625 mW |
Product Category | Gate Drivers |
Product Type | Gate Drivers |
Product | IGBT, MOSFET Gate Drivers |
Propagation Delay - Max | 900 ns |
Rise Time | 60 ns |
Subcategory | PMIC-Power Management ICs |
Supply Voltage - Max | 20 V |
Supply Voltage - Min | 10 V |
Technology | Si |
Type | Half-Bridge |
Automotive | No |
Bridge Type | Half Bridge |
Driver Configuration | Inverting|Non-Inverting |
Driver Type | High and Low Side |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
High and Low Sides Dependency | Synchronous |
Input Logic Compatibility | CMOS|LSTTL|3.3V(Min)|5V |
Latch-Up Proof | Yes |
Lead Shape | Gull-wing |
Maximum Fall Time (ns) | 35 |
Maximum Operating Supply Voltage (V) | 20 |
Maximum Operating Temperature (°C) | 125 |
Maximum Power Dissipation (mW) | 625 |
Maximum Propagation Delay Time (ns) | 900 |
Maximum Rise Time (ns) | 60 |
Maximum Turn-Off Delay Time (ns) | 40 |
Maximum Turn-On Delay Time (ns) | 90 |
Minimum Operating Supply Voltage (V) | 10 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Drivers | 2 |
Number of Outputs | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | CMOS |
Reference Voltage (V) | 600(Max) |
Special Features | Under Voltage Lockout |
Standard Package Name | SO |
Supplier Package | SOIC N |
Type | IGBT|MOSFET |
Typical Input High Threshold Voltage (V) | 2.5(Min) |
Typical Input Low Threshold Voltage (V) | 0.8(Max) |
Fall Time | 35ns |
Package Type | SOIC |
Supply Voltage | 20V |
Вес, г | 0.15 |