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IS61C6416AL-12TLI
Электроэлемент Описание Микросхема, память SRAM, 64Кx16бит, 5В, 12нс, TSOP44 II, параллельный Характеристики
Категория
Микросхема
Тип
памяти
Вид
SRAM
| Категория | Микросхема |
| Тип | памяти |
| Вид | SRAM |
| Access Time | 12 ns |
| Brand | ISSI |
| Data Rate | SDR |
| Factory Pack Quantity | 135 |
| Interface Type | Parallel |
| Manufacturer | ISSI |
| Maximum Operating Temperature | +85 C |
| Memory Size | 1 Mbit |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Number of Ports | 1 |
| Organization | 64 k x 16 |
| Package / Case | TSOP-44 |
| Packaging | Tray |
| Product Category | SRAM |
| RoHS | Details |
| Series | IS61C6416AL |
| Supply Current - Max | 45 mA |
| Supply Voltage - Max | 5.5 V |
| Supply Voltage - Min | 4.5 V |
| Type | Asynchronous |
| ECCN | 3A991B2B |
| HTSUS | 8542.32.0041 |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Type | Volatile |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40В°C ~ 85В°C (TA) |
| Package | Tray |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply | 4.5V ~ 5.5V |
| Write Cycle Time - Word, Page | 12ns |
| Factory Pack Quantity: Factory Pack Quantity | 135 |
| Memory Type | SDR |
| Moisture Sensitive | Yes |
| Organisation | 64 k x 16 |
| Package/Case | TSOP-44 |
| Product Type | SRAM |
| Subcategory | Memory & Data Storage |
| Вес, г | 3.11 |
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