Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole
Semiconductors\Discrete Semiconductors\IGBTsThe XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses.
Channel Type | N |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 78 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +125 °C |
Maximum Power Dissipation | 325 W |
Minimum Operating Temperature | -40 °C |
Mounting Type | Through Hole |
Package Type | TO-247 |
Pin Count | 3 |
Transistor Configuration | Single |
Вес, г | 3 |