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IXFA22N65X2, Транзистор N-MOSFET 650В 22A 390Вт [TO-263]

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency.

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.4V
Maximum Continuous Drain Current	22 A
Maximum Drain Source Resistance	145 mΩ
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	390 W
Minimum Gate Threshold Voltage	2.7V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	HiperFET, X2-Class
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	37 nC @ 10 V
Width	11.05mm
Вес, г	0.5