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IXFA80N25X3, MOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET

UnclassifiedLowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.4V
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	16 mΩ
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	390 W
Minimum Gate Threshold Voltage	2.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	HiperFET
Transistor Configuration	Single
Typical Gate Charge @ Vgs	83 @ 10 V nC
Width	11.05mm
Case	TO263
Drain current	80A
Drain-source voltage	250V
Features of semiconductor devices	ultra junction x-class
Gate charge	83nC
Kind of channel	enhanced
Kind of package	tube
Manufacturer	IXYS
Mounting	SMD
On-state resistance	16mΩ
Polarisation	unipolar
Power dissipation	390W
Reverse recovery time	120ns
Type of transistor	N-MOSFET