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IXFH48N60X3

Semiconductors\Discrete SemiconductorsHiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Brand	IXYS
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	30
Fall Time	5 ns
Forward Transconductance - Min	17 S
Id - Continuous Drain Current	48 A
Manufacturer	IXYS
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package/Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	520 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	38 nC
Rds On - Drain-Source Resistance	65 mOhms
Rise Time	11 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	46 ns
Typical Turn-On Delay Time	23 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	5 V