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IXFK100N65X2, Транзистор N-MOSFET, 650В, 100А, 1040Вт, TO264, 200нс

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency.

Case	TO264
Drain current	100A
Drain-source voltage	650V
Features of semiconductor devices	ultra junction x-class
Gate charge	183nC
Kind of channel	enhanced
Kind of package	tube
Manufacturer	IXYS
Mounting	THT
On-state resistance	30mΩ
Polarisation	unipolar
Power dissipation	1.04kW
Reverse recovery time	200ns
Type of transistor	N-MOSFET
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.4V
Maximum Continuous Drain Current	100 A
Maximum Drain Source Resistance	30 mΩ
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.04 kW
Minimum Gate Threshold Voltage	2.7V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-264P
Pin Count	3
Series	HiperFET, X2-Class
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	183 nC @ 10 V
Width	26.3mm
Brand	IXYS
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	25
Fall Time	7 ns
Forward Transconductance - Min	40 S
Id - Continuous Drain Current	100 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-264-3
Packaging	Tube
Pd - Power Dissipation	1.04 kW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	180 nC
Rds On - Drain-Source Resistance	30 mOhms
Rise Time	24 ns
Series	650V Ultra Junction X2
Subcategory	MOSFETs
Technology	Si
Tradename	HiPerFET
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	83 ns
Typical Turn-On Delay Time	59 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage	2.7 V
Вес, г	9.61