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IXFN36N100, Модуль, одиночный транзистор, 1кВ, 36А, SOT227B, Ugs: ±30В, винтами

Semiconductors\Discrete semiconductors modules\Transistor modules MOSFET\Semiconductors Описание Модуль, одиночный транзистор, 1кВ, 36А, SOT227B, Ugs: ±30В, винтами Характеристики Категория Транзистор Тип модуль Вид MOSFET

Категория	Транзистор
Тип	модуль
Вид	MOSFET
Case	SOT227B
Drain current	36A
Drain-source voltage	1kV
Electrical mounting	screw
Gate charge	380nC
Gate-source voltage	±30V
Kind of channel	enhanced
Manufacturer	IXYS
Mechanical mounting	screw
On-state resistance	0.24Ω
Polarisation	unipolar
Power dissipation	694W
Pulsed drain current	144A
Reverse recovery time	180ns
Semiconductor structure	single transistor
Technology	HiPerFET™
Type of module	MOSFET transistor
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Resistance	240 mΩ
Maximum Drain Source Voltage	1000 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	700 W
Minimum Operating Temperature	-55 °C
Mounting Type	Screw Mount
Number of Elements per Chip	1
Package Type	SOT-227
Pin Count	4
Series	HiperFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	380 nC @ 10 V
Width	25.42mm
Вес, г	37.17