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мелкий и крупный опт
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Цена по запросу
IXTA06N120P, 0.6 Amps 1200V 32 Rds
Semiconductors\Discrete SemiconductorsMOSFET, N-CH, 1.2KV, 0.6A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:600mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source T 03AH1246
| Brand | IXYS |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 27 ns |
| Height | 4.5 mm |
| Id - Continuous Drain Current | 600 mA |
| Length | 9.9 mm |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 42 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 30 Ohms |
| Rise Time | 24 ns |
| RoHS | Details |
| Series | IXTA06N120 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 20 ns |
| Unit Weight | 0.08113 oz |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 9.2 mm |
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