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IXTT20P50P

Semiconductors\Discrete Semiconductors Описание Транзистор: P-MOSFET, PolarP™, полевой, -500В, -20А, 460Вт, ТО268 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Brand	IXYS
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	30
Fall Time	34 ns
Forward Transconductance - Min	11 S
Id - Continuous Drain Current	20 A
Manufacturer	IXYS
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-268-3
Packaging	Tube
Pd - Power Dissipation	460 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	103 nC
Rds On - Drain-Source Resistance	450 mOhms
Rise Time	32 ns
Series	IXTT20P50
Subcategory	MOSFETs
Technology	Si
Tradename	PolarP
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Type	PolarP Power MOSFET
Typical Turn-Off Delay Time	80 ns
Typical Turn-On Delay Time	26 ns
Vds - Drain-Source Breakdown Voltage	500 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V