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IXTT360N055T2, 360Amps 55V

Semiconductors\Discrete SemiconductorsHiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Brand	IXYS
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	30
Fall Time	56 ns
Forward Transconductance - Min	65 S
Id - Continuous Drain Current	360 A
Manufacturer	IXYS
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-268-3
Packaging	Tube
Pd - Power Dissipation	935 W
Product Category	MOSFETs
Product Type	MOSFET
Qg - Gate Charge	330 nC
Rds On - Drain-Source Resistance	2.4 mOhms
Rise Time	23 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	62 ns
Typical Turn-On Delay Time	30 ns
Vds - Drain-Source Breakdown Voltage	55 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V