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Только с Юр. Лицами,
мелкий и крупный опт
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Цена по запросу
IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
Semiconductors\Discrete Semiconductors\IGBTsThe Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
| Channel Type | N |
| Energy Rating | 3mJ |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 570 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 880 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-264 |
| Pin Count | 3 |
| Switching Speed | 10 → 30kHz |
| Transistor Configuration | Single |
| Вес, г | 8 |
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