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IXXN110N65B4H1, IGBT Modules 650V/240A TRENCH IGBT GENX4 XPT

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules650V XPT™ High Speed Trench IGBTs IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

Brand	IXYS
Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	2.1 V
Configuration	Single
Continuous Collector Current at 25 C	230 A
Factory Pack Quantity	10
Gate-Emitter Leakage Current	100 nA
Manufacturer	IXYS
Maximum Gate Emitter Voltage	-20 V, 20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Screw Mount
Package/Case	SOT-227
Packaging	Tube
Pd - Power Dissipation	750 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Modules
Subcategory	Discrete and Power Modules
Technology	Si
Вес, г	30