Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Semiconductors\Discrete Semiconductors\IGBTsThe XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses.

Channel Type	N
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	100 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	750 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Switching Speed	50kHz
Transistor Configuration	Single
Brand	IXYS
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	3.5 V
Configuration	Single
Continuous Collector Current at 25 C	100 A
Continuous Collector Current Ic Max	105 A
Factory Pack Quantity	30
Gate-Emitter Leakage Current	100 nA
Manufacturer	IXYS
Maximum Gate Emitter Voltage	-20 V, 20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package/Case	TO-247AD-3
Packaging	Tube
Pd - Power Dissipation	750 W
Product Category	IGBTs
Product Type	IGBT Transistors
Subcategory	IGBTs
Technology	Si
Вес, г	3