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L6491DTR, Gate Drivers High volt high and low-side 4 A gate driver
Power\Power Management ICs\Gate DriversMOSFET & IGBT Gate Drivers
STMicroelectronics MOSFET & IGBT Gate Drivers are a portfolio of discrete devices for industrial, consumer, computer and automotive applications. The portfolio offers a range spanning from single- to half-bridge and multiple-channel drivers. The drivers are rated for either low- or high-voltage (up to 1500V) applications. ST also offers galvanically-isolated gate driver ICs for safety and functional requirements. System-in-Package (SiP) solutions integrate high- and low-side gate drivers and MOSFET-based power stages. This makes them ideal for the industrial market with higher levels of integration and lower development costs.
| Brand | STMicroelectronics |
| Factory Pack Quantity: Factory Pack Quantity | 2500 |
| Fall Time | 15 ns |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +125 C |
| Maximum Turn-Off Delay Time | 120 ns |
| Maximum Turn-On Delay Time | 120 ns |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Drivers | 2 Driver |
| Number of Outputs | 2 Output |
| Off Time - Max | 120 ns |
| Output Current | 4 A |
| Output Voltage | 580 V |
| Package / Case | SOIC-14 |
| Pd - Power Dissipation | 1 W |
| Product Category | Gate Drivers |
| Product Type | Gate Drivers |
| Product | IGBT, MOSFET Gate Drivers |
| Rds On - Drain-Source Resistance | 175 Ohms |
| Rise Time | 15 ns |
| Series | L6491 |
| Shutdown | Shutdown |
| Subcategory | PMIC-Power Management ICs |
| Supply Voltage - Max | 20 V |
| Supply Voltage - Min | 10 V |
| Technology | Si |
| Type | High-Side, Low-Side |
| IC Case / Package | SOIC |
| Задержка Выхода | 85нс |
| Задержка по Входу | 85нс |
| Количество Выводов | 14вывод(-ов) |
| Конфигурация Привода | Высокая Сторона и Низкая Сторона |
| Максимальная Рабочая Температура | 125 C |
| Максимальное Напряжение Питания | 20В |
| Минимальная Рабочая Температура | -40 C |
| Минимальное Напряжение Питания | 10В |
| Стиль Корпуса Привода | SOIC |
| Тип переключателя питания | MOSFET |
| Ток истока | 4А |
| Ток стока | 4А |
| Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) | 4A, 4A |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.45V, 2V |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C(TJ) |
| Package / Case | 14-SOIC(0.154", 3.90mm Width) |
| Rise / Fall Time (Typ) | 15ns, 15ns |
| Supplier Device Package | 14-SO |
| Voltage - Supply | 10V ~ 20V |
| Вес, г | 0.13 |
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